View AP20N03GP_1168470.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AP20N03GS/P
Pb Free Plating Product
Advanced Power Electronics Corp.
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
30V 52m 20A
G S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20N03GP) is available for low-profile applications. GD S
TO-263(S)
G D
TO-220(P)
S Units V V A A A W W/
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 30 20 20 13 60 31 0.25 -55 to 150 -55 to 150
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 62 Units /W /W
Data & specifications subject to change without notice
200419051-1/4
AP20N03GS/P
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.037 3 6.1 1.4 4 4.9 29 14.3 3.6 290 160 45
Max. Units 52 85 3 1 100 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A VGS=4.5V, ID=8A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=10A VDS=24V VGS=5V VDS=15V ID=20A RG=3.3,VGS=10V RD=0.75 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V
1
Min. -
Typ. -
Max. Units 20 60 1.3 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25, IS=20A, VGS=0V
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
2/4
AP20N03GS/P
70 50
T C =25 C
60
o
T C =150 C ID , Drain Current (A) 10V 8.0V
40
o
10V 8.0V
ID , Drain Current (A)
50
30
40
6.0V
6.0V
20
30
4.0V
10
20
4.0V
10
V G =3.0V
0
0 2 4 6 8
V G =3.0V
0
0
2
4
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
85
1.8
I D =10A
75
T C =25 o C Normalized RDS(ON)
1.6
I D =10A V G =10V
1.4
RDSON (m)
65
1.2
55
1.0
45 0.8
35 2 4 6 8 10
0.6 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
4. Normalized On-Resistance v.s. Junction Temperature
3
100
10 2
IS (A)
1
o T j = 150 C
T j = 25 o C
VGS(th) (V)
1 0 1.3 -50
0.1
0.01 0.1 0.3 0.5 0.7 0.9 1.1
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP20N03GS/P
10
1000
f=1.0MHz
I D =10A VGS , Gate to Source Voltage (V)
8
C (pF)
6
V DS =16V V DS =20V V DS =24V
C iss C oss
100
4
C rss
2
0
10 0 2 4 6 8 10 1 6 11 16 21 26 31
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
0.2
ID (A)
10
1ms
0.1
0.1
0.05
PDM
t
0.02
10ms T c =25 o C Single Pulse
1
T
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
0.01
100ms DC
10 100
Single Pulse
0.01 1 0.00001 0.0001 0.001 0.01 0.1 1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4

▲Up To Search▲

Price & Availability of AP20N03GP

	To Download AP20N03GP Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .